A.G. Kazanskii, I.A. Kurova, I.P.Zvyagin, D.G. Yarkin
Faculty of Physics, Moscow State University, 119899 Moscow, Russian Federation
A detailed study of the illumination time dependence of the persistent photoconductivity as well as that of relaxation after a preliminary illumination in compensated a-Si:H films is carried out. The interpretation of the results is based on a new model of light-induced metastable defects creation. The model assumes the creation of dangling bond - impurity complexes without invoking the conventional idea of the decrease of boron doping efficiency.